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50A02CH-TL-H PDF预览

50A02CH-TL-H

更新时间: 2024-11-26 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
5页 301K
描述
双极晶体管,-50V,-0.5A,低 VCE(sat),PNP 单

50A02CH-TL-H 技术参数

是否无铅: 不含铅生命周期:Active
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:2 weeks
风险等级:5.29JESD-609代码:e6
湿度敏感等级:1端子面层:Tin/Bismuth (Sn/Bi)
Base Number Matches:1

50A02CH-TL-H 数据手册

 浏览型号50A02CH-TL-H的Datasheet PDF文件第2页浏览型号50A02CH-TL-H的Datasheet PDF文件第3页浏览型号50A02CH-TL-H的Datasheet PDF文件第4页浏览型号50A02CH-TL-H的Datasheet PDF文件第5页 
50A02CH  
Bipolar Transistor  
50V, 0.5A, Low VCE(sat), PNP Single  
www.onsemi.com  
Features  
High Collector Current Capability  
Low Collector to Emitter Saturation Voltage (Resistance):  
R
(sat) typ=210mΩ [I =0.5A, I =50mA]  
CE  
C
B
ELECTRICAL CONNECTION  
Low ON-Resistance (Ron)  
Pb-Free, Halogen Free and RoHS compliance  
3
1 : Base  
1
2 : Emitter  
3 : Collector  
Typical Applications  
Low-Frequency Amplifier  
High Speed Switching  
Small Motor Drive  
2
Muting Circuit  
MARKING  
3
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)  
1
2
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Value  
Unit  
V
CPH3  
V
50  
50  
5  
CBO  
CEO  
EBO  
V
V
V
V
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
I
I
500  
1.0  
mA  
A
C
Collector Current (Pulse)  
Collector Dissipation (Note 2)  
Junction Temperature  
CP  
P
700  
mW  
°C  
°C  
C
Tj  
150  
Storage Temperature  
Tstg  
55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
Note 2 : Surface mounted on ceramic substrate(600mm2  
× 0.8mm)  
© Semiconductor Components Industries, LLC, 2016  
April 2016 - Rev. 2  
1
Publication Order Number :  
50A02CH/D  

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