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5082-3080 PDF预览

5082-3080

更新时间: 2024-11-08 22:45:27
品牌 Logo 应用领域
ASI PIN二极管开关测试衰减器
页数 文件大小 规格书
1页 16K
描述
SILICON PIN DIODE

5082-3080 技术参数

生命周期:Active包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.24
Is Samacsys:N应用:ATTENUATOR; SWITCHING
最小击穿电压:100 V外壳连接:ISOLATED
配置:SINGLE最大二极管电容:0.4 pF
标称二极管电容:0.4 pF二极管元件材料:SILICON
最大二极管正向电阻:2.5 Ω二极管电阻测试电流:100 mA
二极管电阻测试频率:100 MHz二极管类型:PIN DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified反向测试电压:50 V
子类别:PIN Diodes表面贴装:NO
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

5082-3080 数据手册

  
5082-3080  
SILICON PIN DIODE  
PACKAGE STYLE 15  
DESCRIPTION:  
The ASI 5082-3080 PIN Diode is  
Designed for Low Power RF Switching  
and Attenuating Applications.  
MAXIMUM RATINGS  
250 mA  
100 V  
I
V
250 mW @ TC = 25 °C  
-65 °C to +150 °C  
-65 °C to +150 °C  
260 °C for 5 sec.  
PDISS  
TJ  
TSTG  
TSOLD  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
VR  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
V
IR = 10 µA  
100  
VF  
τ
IF = 100 mA  
IF = 50 mA  
IF = 100 mA  
1.0  
V
IR = 250 mA  
1300  
µS  
RS  
f = 100 MHz  
2.5  
0.4  
Ct  
RH  
RL  
VR = 50 V  
IF = 10 µA  
IF = 20 mA  
f = 1.0 MHz  
f =100 MHz  
f = 100 MHz  
pF  
1000  
8.0  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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