5.0SMDJ43AS

更新时间： 2024-12-01 13:45:15

品牌	Logo	应用领域
力特 - LITTELFUSE		电子局域网测试光电二极管瞬态抑制器
页数	文件大小	规格书
6页	1040K
描述
5.0SMDJxxS系列采用单芯片设计，专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压影响。特征和优势: 应用: 瞬态抑制组件非常适合保护输入/输出接口、VCC总线和其他

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

5.0SMDJ43AS 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMC, 2 PIN	Reach Compliance Code：	not_compliant
风险等级：	5.68	其他特性：	EXCELLENT CLAMPING CAPABILITY, UL APPROVED
最大击穿电压：	52.8 V	最小击穿电压：	47.8 V
击穿电压标称值：	50.3 V	最大钳位电压：	89.7 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	最大正向电压 (VF)：	3.5 V
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-J2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	5000 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性：	UNIDIRECTIONAL	最大功率耗散：	6.5 W
参考标准：	IEC-61000-4-2, 4-4	最大重复峰值反向电压：	43 V
最大反向电流：	2 µA	反向测试电压：	43 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	J BEND
端子位置：	DUAL

5.0SMDJ43AS 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 5000W > 5.0SMDJ series

Pb e3

RoHS

5.0SMDJ Series

Description

Uni-directional

The 5.0SMDJ series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 5000W peak pulse power • Excellent clamping

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

capability

• Low incremental surge

resistance

• For surface mounted

applications to optimize

board space

• Typical I_Rless than 5μA

when V_BRmin>22V

• High temperature

to reﬂow soldering

Agency Approvals

• Low proﬁle package

AGENCY

AGENCY FILE NUMBER

E230531

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

guaranteed: 260°C/40sec

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation at

T_L=25^OC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2)

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Built-in strain relief

• Glass passivated chip

junction

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

P_D

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

300

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only

V_F

5.0

OperatingTemperature Range

T_J

-65 to 150

-65 to 175

°C

StorageTemperature Range

T_STG

• Fast response time:

typically less than 1.0ps

from 0V to BV min

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

TypicalThermal Resistance Junction

to Ambient

°C/W

Applications

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only,duty cycle=4 per minute maximum.

Computer, Industrial and Consumer electronic

applications.

Additional Infomarion

Functional Diagram

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

中文翻译

下载PDF

与5.0SMDJ43AS相关器件

型号	品牌	获取价格	描述	数据表
5.0SMDJ43AS-HRA	LITTELFUSE	获取价格	5.0SMDJxxS-HRA高可靠性系列专门用于保护敏感电子设备，使其免受雷击和其它瞬态电
5.0SMDJ43A-T7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-
5.0SMDJ43AV	RECTRON	获取价格	Package / Case : DO-214AB(SMC);Mounting Style : SMD/SMT;Power Rating : 5000 W;Polarity : U
5.0SMDJ43C	LGE	获取价格	Surface Mount Transient Voltage Suppressors
5.0SMDJ43C	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
5.0SMDJ43C	ANOVA	获取价格	Surface Mount Transient Voltage Suppressors
5.0SMDJ43C	YANGJIE	获取价格	Transient Voltage Suppressor Diodes
5.0SMDJ43C	SOCAY	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
5.0SMDJ43C	PACELEADER	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
5.0SMDJ43CA	MERITEK	获取价格	Transient Voltage Suppressors

与5.0SMDJ43AS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

5.0SMDJ43AS

5.0SMDJ43AS 技术参数

5.0SMDJ43AS 数据手册

与5.0SMDJ43AS相关器件

与5.0SMDJ43AS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5.0SMDJ43AS

5.0SMDJ43AS 技术参数

5.0SMDJ43AS 数据手册

与5.0SMDJ43AS相关器件

与5.0SMDJ43AS相关文章

您还可以找

您在本页遇到什么问题？