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5.0SMDJ150AV-W PDF预览

5.0SMDJ150AV-W

更新时间: 2024-01-28 16:33:44
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
6页 430K
描述
Trans Voltage Suppressor Diode,

5.0SMDJ150AV-W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.68
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5.0SMDJ150AV-W 数据手册

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5.0SMDJ  
SERIES  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
5000 WATT PEAK POWER 8.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 5000 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
* Fast response time  
SMC  
* P/N suffix V means AEC-Q101 qualified, e.g:5.0SMDJ22AV  
* P/N suffix V means Halogen-free  
0.108 (2.75)  
0.123 (3.25)  
0.217 ( 5.50)  
0.240( 6.10 )  
0.280 ( 7.11 )  
0.260 ( 6.60 )  
0.012 ( 0.305 )  
0.007 ( 0.170 )  
0.087 ( 2.2 )  
0.106 ( 2.70 )  
0.035 ( 0.90)  
0.055 ( 1.40 )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load,  
For capacitive load, derate current by 20%.  
0.008 ( 0.203 )MAX  
0.291 ( 7.40)  
0.331( 8.40 )  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
VALUE  
UNITS  
Watts  
Peak Pulse Power Dissipation with a 10/1000uS  
waveform (Note 1 )  
P
PPM  
Minimum 5000  
Peak Pulse Current with a 10/1000uS waveform (Note 1 )  
I
PPM  
23.9  
6.5  
Amps  
Watts  
Power Dissipation On Infinite Heatsink at T  
L
= 75oC  
P
D
Peak Forward Surge Current, 8.3ms single half sine wave-  
superimposed on rated load( JEDEC METHOD ) (Note 3)  
I
FSM  
300  
374  
Amps  
I2T  
A2S  
Typical Current Squared Time  
Instantaneous Forward Voltage at 100A, (Note 2)  
V
F
Volts  
3.5/6.5  
75  
Typical Thermal Resistance  
R
R
θ
θ
J A  
J L  
0C/W  
0 C  
15  
Typical Thermal Resistance  
T
J
, TSTG  
-55 to + 150  
Operating and Storage Temperature Range  
A
= 25oC per Fig.1.  
2019-01/61  
REV: B  
NOTES : 1. Non-repetitive current pulse, per Fig.5 and derated above T  
VF<6.5V for devices of VBR>200V .  
2. VF<3.5V for devices of VBR<200V and  
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  

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