Datasheet > 4N60

4N60

更新时间： 2024-11-29 18:09:35

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合科泰 - HOTTECH		/
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描述
TO-252

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数据手册

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4N60 数据手册

4N60 4N65

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

R_DS(ON)= 2.5Ω @V_GS= 10 V



Ultra Low Gate Charge ( typical 15 nC )

Low Reverse Transfer Capacitance ( C_RSS= typical 8.0 pF )

Fast Switching Capability

Avalanche Energy Specified

Improved dv/dt Capability, high Ruggedness

TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DSS

RATINGS

600

UNIT

4N60

4N65

650

Gate-Source Voltage

V_GSS

I_AR

±30

Avalanche Current (Note 2)

4.4

Continuous

Pulsed (Note 2)

I_D

4.0

Drain Current

I_DM

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

E_AR

dv/dt

P_D

260

V/ns

Avalanche Energy

10.6

Peak Diode Recovery dv/dt (Note 4)

(T = 25°С)

4.5

Power Dissipation

Junction Temperature

Ambient Operating Temperature

Storage Temperature

Junction-to-Ambient

T_J

+150

-55 ~ +150

°С

T_OPR

T_STG

θ_JA

℃

θ_Jc

Junction-to-Case

2.50

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=64mH, I_AS=4.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤4.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

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