Datasheet > 4N60

4N60

更新时间： 2024-11-29 14:52:59

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
6页	899K
描述
场效应晶体管

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中文翻译

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数据手册

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4N60 数据手册

4 N 6 0

4A,600V N-Channel Power Mosfet

FEATURES



R_DS(ON)=2.5Ω@ V_GS= 10V

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-220AB

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

600

Units

V_DSS

Drain-Source voltage

±30

V_GSS

I_AR

Gate -Source voltage

Avalanche Current (Note1)

Continuous Drain Current

4.4

4.0

I_D

I_DM

Pulsed Drain Current

E_AS

E_AR

Avalanche Energy

Single Pulsed(Note2)

Repetitive

260

10.6

dv/dt

P_D

Peak Diode Recovery dv/dt(Note3)

Power Dissipation

4.5

V/ns

106

Junction-to-Ambient

Junction-to-Case

62.5

℃/W

℃

Case-to Sink

0.5

T_J

+150

Junction Temperature

Operating and Storage Temperature

Tstg

-55 to +150

℃

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Revision:20170701-P1

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