Datasheet > 4N60

4N60

更新时间： 2024-11-28 07:47:15

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
5页	378K
描述
4 Amps，600Volts N-Channel MOSFET

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4N60 数据手册

4N60

4 Amps，600Volts

N-Channel MOSFET

■ Description

The ET4N60 NꢀChannel enhancement mode silicon gate power MOSFET is

designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers

■ Features

ꢀ

R_DS(ON)=2.50ꢁ@V_GS= 10 V

Low gate charge ( typical 16nC)

High ruggedness

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

■ Symbol

■ Absolute Maximum Ratings(T_c=25℃,unless otherwise specified)

Ratings

Parameter

Symbol

Units

TOꢀ220

TOꢀ220F

600

TOꢀ252

DrainꢀSource Voltage

GateꢀSource Voltage

V_DSS

V_GSS

±30

4.0^＊

2.4^＊

T_c=25℃

4.0

2.4

2.8

1.8

Drain Currenet

I_D

Continuous

T_c=100℃

Drain Current Pulsed

(Note 1)

I_DP

16^＊

11.2

Repetitive

Single Pulse

E_AR

E_AS

10.4

180

4.9

Avalanche Energy

(Note 2)

(Note 3)

210

Peak Diode Recovery dv/dt

Total Power Dissipation

dv/dt

4.5

V/ns

T_c=25℃

Derate above 25℃

104

P_D

0.83

0.27

0.39

W/℃

BEIJING ESTEK ELECTRONICS CO.,LTD

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