Datasheet > 4N35TVM

4N35TVM

更新时间： 2024-01-23 02:16:54

品牌	Logo	应用领域
安森美 - ONSEMI		输出元件晶体管光电晶体管
页数	文件大小	规格书
12页	330K
描述
6 引脚 DIP 封装光电晶体管输出光耦合器

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技术参数
数据手册

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4N35TVM 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DIP
包装说明：	DIP-6	针数：	6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.40.80.00	风险等级：	5.4
其他特性：	UL RECOGNIZED, VDE APPROVED	Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE	标称电流传输比：	100%
最大暗电源：	50 nA	最大正向电流：	0.06 A
最大绝缘电压：	7500 V	JESD-609代码：	e3
元件数量：	1	最高工作温度：	100 °C
最低工作温度：	-55 °C	光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

4N35TVM 数据手册

DATA SHEET

www.onsemi.com

6-Pin General Purpose

Phototransistor

Optocouplers

PDIP6

CASE 646BX

4N25M, 4N26M, 4N27M,

4N28M, 4N35M, 4N36M,

4N37M

PDIP6

S SUFFIX

CASE 646BY

Description

The general purpose optocouplers consist of a gallium arsenide

infrared emitting diode driving a silicon phototransistor in a standard

plastic 6−pin dual−in−line package.

PDIP6

T SUFFIX

CASE 646BZ

Features

• Minimum Current Transfer Ratio at I = 10 mA, V = 10 V:

♦ 10% for 4N27M and 4N28M

♦ 20% for 4N25M and 4N26M

MARKING DIAGRAM

♦ 100% for 4N35M and 4N36M and 4N37M

• Safety and Regulatory Approvals:

4N25

VXYYQ

♦ UL1577, 4,170 VAC

for 1 Minute

RMS

♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications

4N25

= Logo

• Power Supply Regulators

• Digital Logic Inputs

• Microprocessor Inputs

= Specific Device Code

= DIN EN/IEC60747−5−5 Option (only

appears on component ordered with

this option)

= One−Digit Year Code

= Digit Work Week

= Assembly Package Code

SCHEMATIC

ANODE 1

CATHODE 2

N/C 3

BASE

COLLECTOR

EMITTER

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

September, 2021 − Rev. 2

4N37M/D

12 3 4 5 6 7...12

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