4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
†
DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE
(TOP VIEW)
ANODE
CATHODE
NC
BASE
1
2
3
6
5
4
High Direct-Current Transfer Ratio
COLLECTOR
EMITTER
High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
†
High-Speed Switching
4N35 only
NC – No internal connection
t = 7 µs, t = 7 µs Typical
r
f
schematic
Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
ANODE
BASE
COLLECTOR
CATHODE
NC
Safety Regulatory Approval
UL/CUL, File No. E65085
EMITTER
†
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV
4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV
4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV
4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV
4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV
Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA
Peak (1 µs, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Phototransistor continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Continuous power dissipation at (or below) 25°C lead temperature:
Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Operating temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 100°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C
A
Storage temperature range, T
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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