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4N33M PDF预览

4N33M

更新时间: 2024-11-16 11:10:23
品牌 Logo 应用领域
安森美 - ONSEMI 光电
页数 文件大小 规格书
12页 337K
描述
6 引脚 DIP 通用光电达林顿光耦合器

4N33M 数据手册

 浏览型号4N33M的Datasheet PDF文件第2页浏览型号4N33M的Datasheet PDF文件第3页浏览型号4N33M的Datasheet PDF文件第4页浏览型号4N33M的Datasheet PDF文件第5页浏览型号4N33M的Datasheet PDF文件第6页浏览型号4N33M的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
6-Pin DIP General Purpose  
Photodarlington Optocoupler  
PDIP6  
CASE 646BX  
6
6
1
1
4N29M, 4N30M, 4N32M,  
4N33M, H11B1M, TIL113M  
PDIP6  
S SUFFIX  
Description  
CASE 646BY  
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M  
have a gallium arsenide infrared emitter optically coupled to a silicon  
planar photodarlington.  
PDIP6  
T SUFFIX  
Features  
6
CASE 646BZ  
High Sensitivity to Low Input Drive Current  
Meets or Exceeds All JEDEC Registered Specifications  
Safety and Regulatory Approvals:  
1
UL1577, 4,170 VAC  
for 1 Minute  
MARKING DIAGRAM  
RMS  
DINEN/IEC6074755, 850 V Peak Working Insulation Voltage  
ON  
Applications  
XXXXX  
VXYYQ  
Low Power Logic Circuits  
Telecommunications Equipment  
Portable Electronics  
ON  
= Logo  
Solid State Relays  
Interfacing Coupling Systems of Different Potentials and Impedances  
XXXXX = Specific Device Code  
V
= DIN EN/IEC6074755 Option (only  
appears on component ordered with  
this option)  
X
YY  
Q
= OneDigit Year Code  
= Digit Work Week  
= Assembly Package Code  
SCHEMATIC  
ANODE  
CATHODE  
N/C  
1
6
BASE  
COLLECTOR  
EMITTER  
2
3
5
4
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2022 Rev. 2  
H11B1M/D  

4N33M 替代型号

型号 品牌 替代类型 描述 数据表
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