Datasheet > 4N30SR2M

4N30SR2M

更新时间： 2024-01-07 18:31:32

品牌	Logo	应用领域
安森美 - ONSEMI		光电
页数	文件大小	规格书
12页	337K
描述
4N29M，4N30M，4N32M，4N33M，H11B1M，TIL113M 6 引脚 DIP 通用型光电达林顿光耦合器

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4N30SR2M 数据手册

DATA SHEET

www.onsemi.com

6-Pin DIP General Purpose

Photodarlington Optocoupler

PDIP6

CASE 646BX

4N29M, 4N30M, 4N32M,

4N33M, H11B1M, TIL113M

PDIP6

S SUFFIX

Description

CASE 646BY

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M

have a gallium arsenide infrared emitter optically coupled to a silicon

planar photodarlington.

PDIP6

T SUFFIX

Features

CASE 646BZ

• High Sensitivity to Low Input Drive Current

• Meets or Exceeds All JEDEC Registered Specifications

• Safety and Regulatory Approvals:

♦ UL1577, 4,170 VAC

for 1 Minute

MARKING DIAGRAM

RMS

♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications

XXXXX

VXYYQ

• Low Power Logic Circuits

• Telecommunications Equipment

• Portable Electronics

= Logo

• Solid State Relays

• Interfacing Coupling Systems of Different Potentials and Impedances

XXXXX = Specific Device Code

= DIN EN/IEC60747−5−5 Option (only

appears on component ordered with

this option)

= One−Digit Year Code

= Digit Work Week

= Assembly Package Code

SCHEMATIC

ANODE

CATHODE

N/C

BASE

COLLECTOR

EMITTER

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

April, 2022 − Rev. 2

H11B1M/D

12 3 4 5 6 7...12

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