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4885-MPSA42 PDF预览

4885-MPSA42

更新时间: 2023-06-19 14:32:04
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
4页 89K
描述
NPN Bipolar Small Signal Transistor

4885-MPSA42 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.66Is Samacsys:N
基于收集器的最大容量:3 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

4885-MPSA42 数据手册

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Order this document  
by MPSA42/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
MPSA42 MPSA43  
Unit  
Vdc  
CASE 29–11, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
300  
300  
6.0  
200  
200  
6.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
°C/mW  
°C/mW  
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPSA42  
MPSA43  
300  
200  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
(BR)CBO  
MPSA42  
MPSA43  
300  
200  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
6.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 200 Vdc, I = 0)  
MPSA42  
MPSA43  
0.1  
0.1  
E
= 160 Vdc, I = 0)  
E
Emitter Cutoff Current  
I
µAdc  
EBO  
(V  
EB  
(V  
EB  
= 6.0 Vdc, I = 0)  
MPSA42  
MPSA43  
0.1  
0.1  
C
= 4.0 Vdc, I = 0)  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1998  

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