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47C16 PDF预览

47C16

更新时间: 2024-09-30 14:52:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器
页数 文件大小 规格书
41页 520K
描述
The Microchip Technology Inc 47C16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2CEERAM Memory

47C16 数据手册

 浏览型号47C16的Datasheet PDF文件第2页浏览型号47C16的Datasheet PDF文件第3页浏览型号47C16的Datasheet PDF文件第4页浏览型号47C16的Datasheet PDF文件第5页浏览型号47C16的Datasheet PDF文件第6页浏览型号47C16的Datasheet PDF文件第7页 
47L04/47C04/47L16/47C16  
4-Kbit/16-Kbit I2C Serial EERAM  
Device Selection Table  
Part Number Density VCC Range Maximum Clock Frequency Temperature Ranges  
Packages  
P, SN, ST  
47L04  
47C04  
47L16  
47C16  
4 Kbit  
4 Kbit  
2.7V-3.6V  
4.5V-5.5V  
2.7V-3.6V  
4.5V-5.5V  
1 MHz  
1 MHz  
1 MHz  
1 MHz  
I, E  
I, E  
I, E  
I, E  
P, SN, ST  
P, SN, ST  
P, SN, ST  
16 Kbit  
16 Kbit  
Features  
Description  
• 4 Kbit/16 Kbit SRAM with EEPROM Backup:  
The  
Microchip  
Technology  
Inc.  
47L04/47C04/47L16/47C16 (47XXX) is a 4/16 Kbit  
SRAM with EEPROM backup. The device is organized  
as 512 x 8 bits or 2,048 x 8 bits of memory and utilizes  
the I2C serial interface. The 47XXX provides infinite  
read and write cycles to the SRAM while EEPROM  
cells provide high-endurance nonvolatile storage of  
data. With an external capacitor, SRAM data is  
automatically transferred to the EEPROM upon loss of  
power. Data can also be transferred manually by using  
either the Hardware Store pin or software control.  
Upon power-up, the EEPROM data is automatically  
recalled to the SRAM. Recall can also be initiated  
through software control.  
- Internally organized as 512 x 8 bits (47X04)  
or 2,048 x 8 bits (47X16)  
- Automatic Store to EEPROM array upon  
power-down (using optional external  
capacitor)  
- Automatic Recall to SRAM array upon  
power-up  
- Hardware Store pin for manual Store  
operations  
- Software commands for initiating Store and  
Recall operations  
- Store time 8 ms maximum (47X04) or  
25 ms maximum (47X16)  
• Nonvolatile External Event Detect Flag  
• High Reliability:  
- Infinite read and write cycles to SRAM  
- More than one million store cycles to  
EEPROM  
- Data retention: >200 years  
- ESD protection: >4,000V  
• High-Speed I2C Interface:  
Packages available  
• 8-Lead PDIP  
• 8-Lead SOIC  
• 8-Lead TSSOP  
Package Types  
- Industry standard 100 kHz, 400 kHz and  
1 MHz  
- Zero cycle delay reads and writes  
- Schmitt Trigger inputs for noise suppression  
- Cascadable up to four devices  
• Write Protection:  
PDIP/SOIC/TSSOP  
VCAP  
1
8
VCC  
A1  
A2  
2
3
4
7
6
5
HS  
SCL  
SDA  
- Software write protection from 1/64 of SRAM  
array to whole array  
VSS  
• Low-Power CMOS Technology:  
- 200 µA active current typical  
- 40 µA standby current (maximum)  
• Available Temperature Ranges:  
- Industrial (I):  
- Extended (E):  
-40°C to +85°C  
-40°C to +125°C  
• Automotive AEC-Q100 Qualified  
2015-2022 Microchip Technology Inc. and its subsidiares  
DS20005371E-page 1  

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