Datasheet > 475ST89E

475ST89E

更新时间： 2024-11-09 07:51:31

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	202K
描述
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz

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475ST89E 数据手册

HMC475ST89 / 475ST89E

v02.0710

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4.5 GHz

Typical Applications

Features

The HMC475ST89 / HMC475ST89E is an ideal RF/IF

gain block & LO or PA driver:

P1dB Output Power: +22 dBm

Gain: 21.5 dB

• Cellular / PCS / 3G

Output IP3: +35 dBm

• Fixed Wireless & WLAN

• CATV, Cable Modem & DBS

• Microwave Radio & Test Equipment

• IF and RF Applications

Cascadable 50 Ohm I/Os

Single Supply: +8V to +12V

Industry Standard SOT89 Package

Functional Diagram

General Description

The HMC475ST89(E) is a InGaP Heterojunction

Bipolar Transistor (HBT) Gain Block MMIC SMT

ampliﬁer covering DC to 4.5 GHz. Packaged in an

industry standard SOT89, the ampliﬁer can be used

as a cascadable 50 Ohm RF/IF gain stage as well as

a LO or PA driver with up to +25 dBm output power.

The HMC475ST89(E) offers 21.5 dB of gain and +35

dBm output IP3 at 850 MHz while requiring only 110

mA from a single positive supply. The Darlington

topology results in reduced sensitivity to normal

process variations and excellent gain stability over

temperature while requiring a minimal number of

external bias components.

Electrical Speciﬁcations, Vs= 8.0 V, Rbias= 9.1 Ohm, T_A= +25° C

Parameter

Min.

Typ.

Max.

Units

DC - 1.0 GHz

1.0 - 2.0 GHz

2.0 - 3.0 GHz

3.0 - 4.0 GHz

4.0 - 4.5 GHz

DC - 4.5 GHz

DC - 1.0 GHz

1.0 - 2.0 GHz

2.0 - 4.5 GHz

DC - 1.0 GHz

1.0 - 4.5 GHz

DC - 4.5 GHz

DC - 1.0 GHz

1.0 - 2.0 GHz

2.0 - 3.0 GHz

3.0 - 4.0 GHz

4.0 - 4.5 GHz

DC - 2.5 GHz

2.5 - 4.5 GHz

DC - 3.0 GHz

3.0 - 4.5 GHz

19.5

17.5

14.5

11.5

21.5

19.5

16.5

13.5

0.008

dB/ °C

Gain

Gain Variation Over Temperature

Input Return Loss

0.012

Output Return Loss

Reverse Isolation

19.0

18.0

17.5

13.0

11.0

22.0

21.0

19.5

16.0

14.0

3.5

3.8

dBm

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept (IP3)

(Pout= 0 dBm per tone, 1 MHz spacing)

Noise Figure

Supply Current (Icq)

110

135

Note: Data taken with broadband bias tee on device output.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

8 - 74

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与475ST89E相关器件

型号	品牌	获取价格	描述	数据表
475STF035M	ILLINOISCAPACITOR	获取价格	105C, 5mm Height Low Profile Radial Lead Aluminum Electrolytic Capacitors
475STF035M	CDE	获取价格	15 mA @ 120 Hz, 105°C
475STF050M	ILLINOISCAPACITOR	获取价格	105C, 5mm Height Low Profile Radial Lead Aluminum Electrolytic Capacitors
475STF050M	CDE	获取价格	19 mA @ 120 Hz, 105°C
475STN025MB	ILLINOISCAPACITOR	获取价格	CAPACITOR, TANTALUM, SOLID, POLARIZED, 25V, 4.7uF, SURFACE MOUNT, 1411, CHIP
475STN025MC	ILLINOISCAPACITOR	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 25V, 20% +Tol, 20% -Tol, 4.7uF, Surfa
475SVF050M	ILLINOISCAPACITOR	获取价格	+85°C 5mm Height Low Profile Radial Lead Alum
475SVF050M	CDE	获取价格	20 mA @ 120 Hz, 85°C
475SVH035MCR	ILLINOISCAPACITOR	获取价格	Small size â Extended Life â Low cost
475SVH035MCR	CDE	获取价格	16 mA @ 120 Hz, 105°C

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