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457QS16GE PDF预览

457QS16GE

更新时间: 2022-05-13 14:56:13
品牌 Logo 应用领域
HITTITE 功率放大器
页数 文件大小 规格书
10页 365K
描述
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

457QS16GE 数据手册

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HMC457QS16G / 457QS16GE  
v03.0907  
InGaP HBT 1 WATT POWER  
AMPLIFIER, 1.7 - 2.2 GHz  
Typical Applications  
Features  
The HMC457QS16G / HMC457QS16GE is ideal for  
applications requiring a high dynamic range amplifier:  
Output IP3: +46 dBm  
Gain: 27 dB @ 1900 MHz  
48% PAE @ +32 dBm Pout  
• CDMA & W-CDMA  
• GSM, GPRS & Edge  
• Base Stations & Repeaters  
+25 dBm W-CDMA Channel Power  
@ -50 dBc ACPR  
Integrated Power Control (Vpd)  
11  
QSOP16G SMT Package: 29.4 mm2  
Included in the HMC-DK002 Designer’s Kit  
Functional Diagram  
General Description  
The HMC457QS16G & HMC457QS16GE are high  
dynamic range GaAs InGaP Heterojunction Bipolar  
Transistor (HBT) 1 watt MMIC power amplifiers  
operating between 1.7 and 2.2 GHz. Packaged in a  
miniature 16 lead QSOP plastic package, the amplifier  
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB  
from 2.0 to 2.2 GHz. Utilizing a minimum number of  
external components, the amplifier output IP3 can  
be optimized to +45 dBm. The power control (Vpd)  
can be used for full power down or RF output power/  
current control. The high output IP3 and PAE make  
the HMC457QS16G & HMC457QS16GE ideal power  
amplifiers for Cellular/3G base station & repeater  
applications.  
Electrical Specifications, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1]  
Parameter  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
Units  
MHz  
dB  
Frequency Range  
1710 - 1990  
2010 - 2170  
Gain  
24  
27  
0.025  
11  
22  
25  
0.025  
11  
Gain Variation Over Temperature  
Input Return Loss  
0.035  
0.035  
dB / °C  
dB  
Output Return Loss  
8
5
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
26  
42  
29  
27.5  
42  
30.5  
32  
dBm  
dBm  
dBm  
dB  
32.5  
45  
[2]  
Output Third Order Intercept (IP3)  
45  
Noise Figure  
6
5
Supply Current (Icq)  
Control Current (Ipd)  
Bias Current (Vbias)  
500  
4
500  
4
mA  
mA  
10  
10  
mA  
[1] Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found  
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.  
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 240  

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