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452QS16GE PDF预览

452QS16GE

更新时间: 2024-09-19 03:00:55
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HITTITE 功率放大器
页数 文件大小 规格书
22页 1044K
描述
InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

452QS16GE 数据手册

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HMC452QS16G / 452QS16GE  
v01.0205  
InGaP HBT 1 WATT POWER  
AMPLIFIER, 0.4 - 2.2 GHz  
5
Typical Applications  
Features  
The HMC452QS16G / HMC452QS16GE is ideal for  
applications requiring a high dynamic range amplifier:  
Output IP3: +48 dBm  
22.5 dB Gain @ 400 MHz  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
• CATV/Cable Modem  
• Fixed Wireless & WLL  
9 dB Gain @ 2100 MHz  
53% PAE @ +31 dBm Pout  
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP  
Single +5V Supply  
Integrated Power Control (VPD)  
QSOP16G SMT Package: 29.4 mm2  
General Description  
Functional Diagram  
The HMC452QS16G & HMC452QS16GE are high  
dynamic range GaAs InGaP Heterojunction Bipolar  
Transistor (HBT) 1 watt MMIC power amplifiers  
operating between 0.4 and 2.2 GHz. Packaged  
in a miniature 16 lead QSOP plastic package, the  
amplifier gain is typically 22.5 dB at 0.4 GHz and 9  
dB at 2.1 GHz. Utilizing a minimum number of external  
components and a single +5V supply, the amplifier  
output IP3 can be optimized to +43 dBm at 0.4 GHz  
or +48 dBm at 2.1 GHz. The power control (VPD)  
can be used for full power down or RF output power/  
current control. The high output IP3 and PAE make  
the HMC452QS16G & HMC452QS16GE ideal power  
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed  
Wireless applications.  
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1]  
Parameter  
Frequency Range  
Gain  
Min.  
Typ.  
400 - 410  
22.5  
Max. Min.  
Typ.  
450 - 496  
21.5  
Max. Min.  
Typ.  
810 - 960  
15.5  
Max. Min.  
Typ.  
Max. Min. Typ. Max. Units  
1710 - 1990  
10  
2010 - 2170  
9
MHz  
dB  
20  
19  
13  
7.5  
6.5  
Gain Variation Over  
Temperature  
0.012 0.02  
0.012 0.02  
0.012 0.02  
0.012 0.02  
0.012 0.02 dB/C  
Input Return Loss  
13  
7
15  
8
9
17  
15  
11  
20  
dB  
dB  
Output Return Loss  
12  
Output Power for 1dB  
Compression (P1dB)  
27.5  
40  
30.5  
31  
27.5  
41  
30.5  
31  
27  
45  
30  
31  
48  
28  
45  
31  
31.5  
48  
28  
45  
31  
32.5  
48  
dBm  
dBm  
dBm  
Saturated Output  
Power (Psat)  
Output Third Order  
43  
44  
[2]  
Intercept (IP3)  
Noise Figure  
7
7
7
7
7.5  
485  
10  
dB  
mA  
mA  
Supply Current (Icq)  
Control Current (IPD)  
485  
10  
485  
10  
485  
10  
485  
10  
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found  
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.  
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 252  

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