Datasheet > 4259-00

4259-00

更新时间： 2022-09-19 10:21:45

品牌	Logo	应用领域
PSEMI		开关射频开关光电二极管
页数	文件大小	规格书
8页	180K
描述
SPDT High Power UltraCMOS? DC - 3.0 GHz RF Switch

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Product Specification

PE4259

SPDT High Power UltraCMOS™

DC – 3.0 GHz RF Switch

Product Description

The PE4259 UltraCMOS™ RF Switch is designed to cover a

broad range of applications from near DC through 3000 MHz.

This reflective switch integrates on-board CMOS control logic

with a low voltage CMOS-compatible control interface, and can

be controlled using either single-pin or complementary control

inputs. Using a nominal +3-volt power supply voltage, a typical

input 1 dB compression point of +33.5 dBm can be achieved.

Features

• Single-pin or complementary CMOS

logic control inputs

• Low insertion loss: 0.35 dB at

1000 MHz, 0.5 dB at 2000 MHz

• Isolation of 30 dB at 1000 MHz, 20 dB

at 2000 MHz

The PE4259 SPDT High Power UltraCMOS™ RF Switch is

manufactured in Peregrine’s patented Ultra Thin Silicon

(UTSi®) CMOS process, offering the performance of GaAs with

the economy and integration of conventional CMOS.

• Typical input 1 dB compression point

of +33.5 dBm

• Ultra-small SC-70 package

Figure 1. Functional Diagram

Figure 2. Package Type SC-70

6-lead SC-70

RFC

RF1

RF2

CMOS

Control

Driver

CTRL CTRL or V_DD

Table 1. Electrical Specifications @ +25 °C, V_DD= 3 V (Z_S= Z_L= 50 ꢀ)

Parameter

Conditions

Minimum

Typical

Maximum

Units

Operation Frequency¹

3000

MHz

1000 MHz

2000 MHz

0.35

0.50

0.45

0.60

Insertion Loss

Isolation

1000 MHz

2000 MHz

1000 MHz

2000 MHz

Return Loss

‘ON’ Switching Time

‘OFF’ Switching Time

Video Feedthrough²

Input 1 dB Compression

Input IP3

50% CTRL to 0.1 dB of final value, 1 GHz

50% CTRL to 25 dB isolation, 1 GHz

1.50

mV_pp

dBm

1000 MHz

31.5

33.5

1000 MHz, 20dBm input power

Notes: 1. Device linearity will begin to degrade below 10 MHz.

2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to

High or High to Low in a 50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.

Document No. 70-0134-02 │ www.psemi.com

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