Datasheet > 40PTxxAI

40PTxxAI

更新时间： 2024-02-29 12:18:16

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	661K
描述
Stansard SCRs, 40A

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40PTxxAI 数据手册

RoHS

40PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 40A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1600

4 to 60

TO-220AB (non-Insulated)

(40PTxxA)

TO-220AB (lnsulated)

(40PTxxAI)

DESCRIPTION

The 40PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where in-rush current conditions are critical such

as overvoltage crowbar protection circuits in power

supplies, in-rush current limiting circuits, solid

state relay in back to back configuration, welding

equipment and high power motor control.

TO-3P (non-Insulated)

TO-3P (Insulated)

(40PTxxB)

(40PTxxBI)

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

2(A)

1(K)

TO-263 (D²PAK)

(40PTxxH)

TO-247AB (non-Insulated)

3(G)

(40PTxxC)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c=95°C

TO-3P/TO-247AB

RMS on-state current full sine wave

I_T(RMS)

T_c=90°C

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

TO-3P/TO-247AB

(180° conduction angle )

T_c=80°C

T_c=95°C

Average on-state current

(180° conduction angle)

I_T(AV)

T_c=90°C

T_c=80°C

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

F =50 Hz

t = 20 ms

460

480

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

1058

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j= 125ºC

dI/dt

I_GM

F = 60 Hz

T_p= 20 µs

T_p=20µs

T_j=125ºC

T_j= 125ºC

Peak gate current

P_GM

P_G(AV)

V_DRM

Maximum gate power

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

Operating junction temperature range

T_j=125ºC

600 to 1600

V_RRM

T_stg

T_j

- 40 to + 150

- 40 to + 125

ºC

Maximum peak reverse gate voltage V_RGM

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