RoHS
40PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 40A
2
Main Features
Symbol
Value
40
Unit
1
1
2
3
IT(RMS)
A
2
3
VDRM/VRRM
IGT
V
600 to 1600
4 to 35
TO-220AB (non-Insulated)
(40PTxxA)
TO-220AB (lnsulated)
(40PTxxAI)
mA
A2
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
A1
A2
G
A1
A2
G
TO-3P (non-Insulated)
TO-3P (Insulated)
(40PTxxB)
(40PTxxBI)
A2
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1
A2
1
2
3
G
2
(A2)
TO-263 (D2PAK)
(40PTxxH)
TO-247AB (non-Insulated)
(G)3
(40PTxxC)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc=95°C
TO-3P/TO-247AB
RMS on-state current full sine wave
IT(RMS)
Tc=90°C
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
40
A
(180° conduction angle )
Tc=80°C
Tc=95°C
Average on-state current
(180° conduction angle)
A
IT(AV)
Tc=90°C
Tc=80°C
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
25
t = 20 ms
460
480
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
1058
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj = 125ºC
dI/dt
IGM
F = 60 Hz
50
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
PGM
PG(AV)
VDRM
Maximum gate power
W
W
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Tj =125ºC
600 to 1600
V
VRRM
Tstg
Tj
- 40 to + 150
- 40 to + 125
5
ºC
V
Operating junction temperature range
Maximum peak reverse gate voltage VRGM
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