Datasheet > 40PT10B

40PT10B

更新时间： 2022-09-19 00:52:27

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
5页	893K
描述
Stansard SCRs, 40A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

40PT10B 数据手册

RoHS

40PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 40A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1600

4 to 35

TO-220AB (non-Insulated)

(40PTxxA)

TO-220AB (lnsulated)

(40PTxxAI)

DESCRIPTION

The 40PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where in-rush current conditions are critical such

as overvoltage crowbar protection circuits in power

supplies, in-rush current limiting circuits, solid

state relay in back to back configuration, welding

equipment and high power motor control.

TO-3P (non-Insulated)

TO-3P (Insulated)

(40PTxxB)

(40PTxxBI)

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

(A2)

TO-263 (D²PAK)

(40PTxxH)

TO-247AB (non-Insulated)

(G)3

(40PTxxC)

1(A1)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c=95°C

TO-3P/TO-247AB

RMS on-state current full sine wave

I_T(RMS)

T_c=90°C

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

TO-3P/TO-247AB

(180° conduction angle )

T_c=80°C

T_c=95°C

Average on-state current

(180° conduction angle)

I_T(AV)

T_c=90°C

T_c=80°C

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

F =50 Hz

t = 20 ms

460

480

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

1058

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j= 125ºC

dI/dt

I_GM

F = 60 Hz

T_p= 20 µs

T_p=20µs

T_j=125ºC

T_j= 125ºC

Peak gate current

P_GM

P_G(AV)

V_DRM

Maximum gate power

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

T_j=125ºC

600 to 1600

V_RRM

T_stg

T_j

- 40 to + 150

- 40 to + 125

ºC

Operating junction temperature range

Maximum peak reverse gate voltage V_RGM

Page 1 of 5

www.nellsemi.com

12 3 4 5

下载PDF

与40PT10B相关器件

型号	品牌	描述	获取价格	数据表
40PT10BI	NELLSEMI	Stansard SCRs, 40A	获取价格
40PT10C	NELLSEMI	Stansard SCRs, 40A	获取价格
40PT10H	NELLSEMI	Stansard SCRs, 40A	获取价格
40PT1140AX	BOTHHAND	40 PIN DIP ETHERNET 10/100 BASE -TX HIGH SPEED LAN MAGNETICS	获取价格
40PT1140AXLF	BOTHHAND	40 PIN DIP ETHERNET 10/100 BASE -TX HIGH SPEED LAN MAGNETICS	获取价格
40PT12A	NELLSEMI	Stansard SCRs, 40A	获取价格