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40CPQ080GPBF_12 PDF预览

40CPQ080GPBF_12

更新时间: 2024-11-27 07:47:31
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威世 - VISHAY /
页数 文件大小 规格书
7页 578K
描述
Schottky Rectifier, 2 x 20 A

40CPQ080GPBF_12 数据手册

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VS-40CPQ...GPbF Series, VS-40CPQ...G-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 20 A  
FEATURES  
Base  
common  
• 175 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
Anode  
Anode  
2
2
1
TO-247AC  
Common  
cathode  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 20 A  
DESCRIPTION  
IF(AV)  
The VS-40CPQ...G... center tap Schottky rectifier has been  
optimized for low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation  
up to 175 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
VR  
80 V, 100 V  
0.61 V  
VF at IF  
I
RM max.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
11.25 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
80/100  
2950  
tp = 5 μs sine  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
0.61  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-40CPQ080GPbF VS-40CPQ080G-N3 VS-40CPQ100GPbF VS-40CPQ100G-N3 UNITS  
Maximum DC reverse  
voltage  
VR  
80  
80  
100  
100  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 145 °C, rectangular waveform  
40  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
2950  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
300  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 5.6 mH  
11.25  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.75  
Revision: 11-Oct-11  
Document Number: 94211  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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