TransientVoltage Suppression Diodes
Surface Mount – 4000W > 4.0SMDJ24A
Pb e3
RoHS
4.0SMDJ24A
Description
Uni-directional
The 4.0SMDJ24A is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• 4000W peak pulse power • Glass passivated chip
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• For surface mounted
applications in order to
optimize board space
junction
Agency Approvals
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
at terminals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings andThermal Characteristics
(TA=25OC unless otherwise noted)
• Low profile package
•Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
Parameter
Symbol
PPPM
Value
4000
Unit
W
Peak Pulse Power Dissipation at
TA=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink atTL=50OC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260°C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
PD
6.5
W
A
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
IFSM
300
30kV(Air), 30kV (Contact)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
VF
3.5
V
OperatingTemperature Range
StorageTemperature Range
TJ
-65 to 150
-65 to 175
°C
°C
TSTG
TypicalThermal Resistance Junction
to Lead
°C/W
RθJL
RθJA
15
75
• Built-in strain relief
TypicalThermal Resistance Junction
to Ambient
°C/W
• VBR @TJ= VBR@25°C
x (1+αT x (TJ - 25))
(αT:Temperature
Coefficient, typical value
is 0.1%)
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
Applications
Functional Diagram
TVS devices are ideal for the protection of I/O Interfaces,
CC bus and other vulnerable circuits used inTelecom,
Cathode
Anode
V
Computer, Industrial and Consumer electronic
applications.
Uni-directional
Electrical Characteristics (TA=25°C unless otherwise noted)
Maximum
Maximum
Clamping
Voltage VC
@ Ipp
(8/20µS)
(V)
Breakdown
Voltage VBR
(Volts) @ IT
Reverse
Stand off
Maximum
Peak Pulse
CurrentIpp
(10/1000µS)
(A)
Maximum
Peak Pulse
Current Ipp
(8/20µS)
(A)
Maximum
Reverse
Leakage IR
@ VR
Test
Current
IT
Clamping
Voltage VC
@ Ipp
Part
Number
Marking Voltage
VR
(10/1000µS)
(V)
(mA)
(Volts)
MIN
26.70
MAX
29.50
(µA)
4PEZ
24.0
1
38.9
51.0
103.0
650.0
2
4.0SMDJ24A
1
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/20/15
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