Datasheet > 3VD396500YL

3VD396500YL

更新时间： 2024-02-19 19:26:17

品牌	Logo	应用领域
士兰微 - SILAN		高压
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描述
HIGH VOLTAGE MOSFET CHIPS

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中文翻译

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数据手册

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3VD396500YL 数据手册

3VD396500YL HIGH VOLTAGE MOSFET CHIPS

DESCRIPTION

¾ 3VD396500YL is a High voltage N-Channel

enhancement mode power MOS-FET chip fabricated

in advanced silicon epitaxial planar technology;

¾ Advanced termination scheme to provide enhanced

voltage-blocking capability;

¾ Avalanche Energy Specified;

¾ Source-to-Drain Diode Recovery Time Comparable to

a Discrete Fast Recovery Diode;

¾ The chips may packaged in TO-220 type and the

typical equivalent product is 840;

CHIP TOPOGRAPHY

¾ The packaged product is widely used in AC-DC

power suppliers, DC-DC converters and H-bridge

PWM motor drivers;

¾ Die size: 4.13mm*3.98mm;

¾ Chip Thickness: 300±20μm;

¾ Top metal: Al, Backside Metal: Ag.

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Symbo

Parameter

Ratings

Unit

Drain-Source Voltage

VDS

VGS

500

±20

Gate-Source Voltage

Drain Current

8.0

Power Dissipation (TO-220 Package)

Operation Junction Temperature

Storage Temperature

°C

-55～+150

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

Test conditions

Min.

Typ. Max. Unit

Drain -Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

500

Gate Threshold Voltage

Drain-Source Leakage Current

Static Drain- Source On State

Resistance

VTH

VGS= VDS, ID=250µA

VDS=500V, VGS=0V

2.0

4.0

1.0

IDSS

µA

RDS(on)

IGSS

VGS=10V, ID=4.0A

VGS=±30V, VDS=0V

IS=8.0A, VGS=0V

0.76

0.9

±100

1.4

Gate-Source Leakage Current

Source-Drain Diode Forward on

Voltage

VFSD

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.0

2008.07.28

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