Datasheet > 3VD393600YL

3VD393600YL

更新时间： 2024-02-05 00:06:47

品牌	Logo	应用领域
士兰微 - SILAN		高压
页数	文件大小	规格书
1页	33K
描述
HIGH VOLTAGE MOSFET CHIPS

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数据手册

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3VD393600YL 数据手册

3VD393600YL

3VD393600YL HIGH VOLTAGE MOSFET CHIPS

DESCRIPTION

3VD393600YL is a High voltage N•Channel

enhancement mode power MOS•FET chip fabricated

in advanced silicon epitaxial planar technology.

Advanced termination scheme to provide enhanced

voltage•blocking capability.

Avalanche Energy Specified

Source•to•Drain Diode Recovery Time Comparable to

a Discrete Fast Recovery Diode

The chips may packaged in TO•220 type and the

typical equivalent product is 06N60.

The packaged product is widely used in AC•DC

power suppliers, DC•DC converters and H•bridge

PWM motor drivers.

Die size: 4.03mm*3.76mm.

Chip Thickness: 300±m2m0.

CHIP TOPOGRAPHY

Top metal : Al, Backside Metal : Ag.

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Drain•Source Voltage

Symbol

VDS

VGS

Ratings

600

Unit

Gate•Source Voltage

±30

Drain Current

Power Dissipation (TO•220 Package)

Operation Junction Temperature

Storage Temperature

110

°C

150

•55̚+150

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

BVDSS

VTH

Test conditions

Min

600

Typ

Max

Unit

Drain •Source Breakdown Voltage

Gate Threshold Voltage

VGS=0V, ID=250µA

VGS= VDS, ID=250µA

VDS=600V, VGS=0V

Drain•Source Leakage Current

Static Drain• Source On State

Resistance

IDSS

µA

RDS(on)

VGS=10V, ID=3.5A

1.2

Gate•Source Leakage Current

Source•Drain Forward on Voltage

IGSS

VGS=±30V, VDS=0V

IS=7A, VGS=0V

±100

1.3

VFSD

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2007.07.02

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