Datasheet > 3VD324600YL

3VD324600YL

更新时间： 2024-09-25 06:26:51

品牌	Logo	应用领域
士兰微 - SILAN		高压局域网
页数	文件大小	规格书
1页	92K
描述
HIGH VOLTAGE MOSFET CHIPS

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中文翻译

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技术参数
数据手册

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3VD324600YL 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.76
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

3VD324600YL 数据手册

3VD324600YL HIGH VOLTAGE MOSFET CHIPS

DESCRIPTION

3VD324600YL is a High voltage N-Channel

enhancement mode power MOS-FET chip fabricated in

advanced silicon epitaxial planar technology;

Advanced termination scheme to provide enhanced

voltage-blocking capability;

Avalanche Energy Specified;

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode;

CHIP TOPOGRAPHY

The chips may packaged in TO-220 type and the typical

equivalent product is 4N60A;

The packaged product is widely used in AC-DC power

suppliers, DC-DC converters and H-bridge PWM motor

drivers;

Die size: 3.78mm*2.78mm;

Chip Thickness: 300±20μm;

Top metal: Al, Backside Metal: Ag.

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Drain-Source Voltage

Symbol

VDS

VGS

Ratings

Unit

600

±30

Gate-Source Voltage

Drain Current

4.0

Power Dissipation (TO-220 Package)

Operation Junction Temperature

Storage Temperature

106

°C

-55～+150

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Drain -Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source Leakage Current

Static Drain- Source On State

Resistance

Symbol

BVDSS

VTH

Test conditions

Min.

600

2.0

Typ.

Max.

Unit

VGS=0V, ID=250µA

VGS= VDS, ID=250µA

VDS=600V, VGS=0V

4.0

1.0

IDSS

µA

RDS(on) VGS=10V, ID=2.0A

2.1

±100

1.4

Gate-Source Leakage Current

Source-Drain Diode Forward on

Voltage

IGSS

VGS=±30V, VDS=0V

IS=4.0A, VGS=0V

VFSD

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2008.10.15

Page 1 of 1

中文翻译

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