Datasheet > 3VD250600YL

3VD250600YL

更新时间： 2024-01-01 02:39:18

品牌	Logo	应用领域
士兰微 - SILAN		高压
页数	文件大小	规格书
2页	105K
描述
HIGH VOLTAGE MOSFET CHIPS

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数据手册

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3VD250600YL 数据手册

3VD250600YL HIGH VOLTAGE MOSFET CHIPS

DESCRIPTION

¾ 3VD250600YL is a High voltage N-Channel

enhancement mode power MOS-FET chip fabricated

in advanced silicon epitaxial planar technology.

¾ Advanced termination scheme to provide enhanced

voltage-blocking capability.

¾ Avalanche Energy Specified

¾ Source-to-Drain Diode Recovery Time Comparable to

a Discrete Fast Recovery Diode

PAD1-Gate PAD3-Source

¾ The chips may packaged in TO-251 type and the

typical equivalent product is 2N60.

CHIP TOPOGRAPHY

¾ The packaged product is widely used in AC-DC

power suppliers, DC-DC converters and H-bridge

PWM motor drivers.

¾ Die size: 2.59mm*2.42mm.

¾ Chip Thickness: 300±20μm.

¾ Top metal : Al, Backside Metal : Ag.

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Symbo

Parameter

Ratings

Unit

Drain-Source Voltage

VDS

VGS

600

±30

Gate-Source Voltage

Drain Current

2.0

Power Dissipation (TO-251 Package)

Operation Junction Temperature

Storage Temperature

°C

-55～+150

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Symbo

Parameter

Test conditions

Min.

Typ. Max. Unit

Drain -Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source Leakage Current

Static Drain- Source On State

Resistance

BVDSS

VTH

VGS=0V, ID=250µA

VGS= VDS, ID=250µA

VDS=600V, VGS=0V

600

2.0

4.0

1.0

IDSS

µA

RDS(on) VGS=10V, ID=1.0A

4.1

4.6

±100

1.4

Gate-Source Leakage Current

Source-Drain Diode Forward on

Voltage

IGSS

VGS=±30V, VDS=0V

IS=2.0A, VGS=0V

VFSD

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.0

2008.07.28

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