Datasheet > 3VD060060NEJL

3VD060060NEJL

更新时间： 2024-09-25 06:26:51

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士兰微 - SILAN		/
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描述
NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

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3VD060060NEJL 数据手册

3VD060060NEJL

3VD060060NEJL N•CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

DESCRIPTION

3VD060060JL is a N•Channel enhancement mode

MOS•FET chip fabricated in advanced silicon epitaxial

planar technology.

Zener diode ESD protected up to 2KV

High density cell design for low_DSR(ON)

Rugged and reliable.

Fast switching performance.

High saturation current capability.

The chips may be packaged in SOT•23 type and the

typical equivalent product is 2N7002K.

The packaged product is widely used in the small servo

motor control, power MOS•FET gate drivers, and other

switching applications.

CHIP TOPOGRAPHY

Die size: 0.60mm*0.60mm.

Chip Thickness: 230±m2m0.

Top metal : Al, Backside Metal : Au.

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Drain•Source Voltage

Gate•Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

±20

300

°C

Power Dissipation (SOT•23)

Operation Junction Temperature

Storage Temperature

350

150

•55•150

°C

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

Test conditions

VGS=0V, ID=10µA

Min

Typ

••

Max

••

Unit

Drain•Source Breakdown Voltage V(BR)DSS

••

Gate•Threshold Voltage*

Gate•body Leakage

Vth(GS)

lGSS

VDS= VGS, ID=250µA

VDS=0V, VGS =±20V

VDS=60V, VGS =0V

VGS=10V, ID=500mA

VGS=5V, ID=50mA

2.5

±10

••

µA

••

Zero Gate Voltage Drain Current

IDSS

••

2.0

3.0

Drain•Source On•Resistance*

RDS(on)

••

Note:* Pulse test, pulse width300µS, duty cycle2%

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2007.09.03

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