Datasheet > 3VD045060JL

3VD045060JL

更新时间： 2024-09-25 06:26:51

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描述
Nchannel MOSFET CHIPS

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数据手册

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3VD045060JL 数据手册

3VD045060JL

3VD045060JL N•channel MOSFET CHIPS

DESCRIPTION

3VD045060JL is a N•Channel enhancement mode

MOS•FET chip fabricated in advanced silicon

epitaxial planar technology.

High density cell design for low_DSR(ON)

Rugged and reliable.

Fast switching performance.

High saturation current capability.

The chips may be packaged in SOT•23 type and the

typical equivalent product is 2N7002.

The packaged product is widely used in the small

servo motor control, power MOS•FET gate drivers,

and other switching applications.

PAD1: GATE

PAD2: SOURCE

CHIP TOPOGRAPHY

Chip Thickness: 230±m2m0.

Top metal : Al, Backside Metal : Au.

Die size: 0.53mm*0.53mm.

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Drain•Source Voltage

Gate•Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

±20

115

°C

Power Dissipation (SOT•23)

Operation Junction Temperature

Storage Temperature

200

150

•55•150

°C

Tstg

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

Test conditions

VGS=0V, ID=10µA

Min

Typ

Max

Unit

Drain•Source Breakdown Voltage V(BR)DSS

VGS =0V, ID=3mA

Gate•Threshold Voltage*

Gate•body Leakage

Vth(GS)

lGSS

VDS= VGS, ID=250µA

VDS=0V, VGS =±20V

VDS=60V, VGS =0V

VGS=10V, VDS=7V

VGS=10V, ID=500mA

VGS=5V, ID=50mA

VGS=10V, ID=500mA

VGS=5V, ID=50mA

VDS=10V, ID=200mA

IS=115mA, VGS =0V

2.5

±100

µA

Zero Gate Voltage Drain Current

On•state Drain Current*

IDSS

ID(ON)

500

1.2

1.7

7.5

Drain•Source On•Resistance*

Drain•Source On• Voltage *

RDS(on)

VDS(on)

3.75

0.375

Forward Transconductance*

Diode Forward Voltage

gts

VSDF

1.2

Note:* Pulse test, pulse width300µS, duty cycle2%

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2007.07.02

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