Datasheet > 3VD037060NEJL

3VD037060NEJL

更新时间： 2024-01-10 12:06:32

品牌	Logo	应用领域
士兰微 - SILAN		/
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描述
N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

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3VD037060NEJL 数据手册

3VD037060NEJL

STRUCTURE

N-CH MOSFET CHIPS WITH ESD PROTECTED

DESCRIPTION

¾ 3VD037060NEJL is a N-Channel enhancement mode

MOS-FET chip fabricated in advanced silicon

epitaxial planar technology.

¾ Zener diode ESD protected up to 500V (HBM).

¾ High density cell design for low RDS (ON).

¾ Rugged and reliable.

¾ Fast switching performance.

¾ High saturation current capability.

¾ The chips may be packaged in SOT-23 type .

¾ The packaged product is widely used in the small

servo motor control, power MOS-FET gate drivers,

and other switching applications.

CHIP TOPOGRAPHY

¾ Die size: 0.37mm*0.37mm.

¾ Chip Thickness: 230±20μm.

¾ Top metal: Al, Backside Metal: Au.

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

VDS

VGS

Ratings

Unit

±20

Drain Current

100

°C

Drain Current --Plused *

Power Dissipation (SOT-23)

Operation Junction Temperature

Storage Temperature

IDM

600

200

150

Tstg

-55-150

°C

Note:* Repetitive rating: pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

Test conditions

Min.

Typ. Max.

Unit

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA

2.0

±5

Gate-Threshold Voltage*

Gate-body Leakage

Vth(GS)

lGSS

VDS= VGS, ID=250µA

VDS=0V, VGS =±20V

VDS=60V, VGS =0V

VGS=5.0V, ID=100mA

VGS=10V, ID=100mA

1.2

µA

Zero Gate Voltage Drain Current

IDSS

Drain-Source On-Resistance *

RDS(on)

Ω

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.1

2008.10.15

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