Datasheet > 3SK166A-2

3SK166A-2

更新时间： 2024-02-06 16:39:37

品牌	Logo	应用领域
索尼 - SONY		栅
页数	文件大小	规格书
5页	75K
描述
GaAs N-channel Dual Gate MES FET

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3SK166A-2 数据手册

3SK166A

GaAs N-channel Dual Gate MES FET

For the availability of this product, please contact the sales office.

Description

The 3SK166A is an N-channel dual gate GaAs

MES FET for UHF band low-noise amplification. The

circuit matching is easier to be made for all UHF

band, resulting in the excellent performance, due to

the optimal design of input impedance.

Features

• Low voltage operation

• Low noise: NF = 1.2dB (typ.) at 800MHz

• High gain: Ga = 20dB (typ) at 800MHz

• High stability

Application

UHF band amplifier, oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

• Gate 1 to source voltage

• Gate 2 to source voltage

• Drain current

VDSX

VG1S

VG2S

–6

°C

• Allowable power dissipation

• Channel temperature

• Storage temperature

150

Tch

Tstg

150

–55 to +150

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E96Y11-PS

12 3 4 5

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