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3N80 PDF预览

3N80

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
鲁光 - LGE 晶体管场效应晶体管
页数 文件大小 规格书
3页 801K
描述
场效应晶体管

3N80 技术参数

极性:N-ChannelPd(W):
V(BR)DS_min(V):800ID_max(A):3
Rds_max(Ω):4.5@VGS(V):10
VTH(GS):4.5PACKAGE:TO-220AB
class:Transistors

3N80 数据手册

 浏览型号3N80的Datasheet PDF文件第2页浏览型号3N80的Datasheet PDF文件第3页 
3 N 8 0  
2.5A,800V N-Channel Power Mosfet  
FEATURES  
RDS(ON) =3.8@ VGS = 10V  
Ultra low gate charge ( typical 19 nC )  
Low reverse transfer Capacitance ( CRSS = typical 11 pF )  
Fast switching capability  
Avalanche energy specified  
Improved dv/dt capability, high ruggedness  
TO-220AB  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
800  
Units  
VDSS  
Drain-Source voltage  
V
V
±30  
VGSS  
ID  
Gate -Source voltage  
Continuous Drain Current  
Pulsed Drain Current  
2.5  
10  
A
IDM  
A
EAS  
dv/dt  
PD  
Avalanche Energy  
Single Pulsed  
170  
4.5  
mJ  
Peak Diode Recovery dv/dt  
Power Dissipation  
V/ns  
W
70  
RθJA  
Thermal resistance,Junction-to-Ambient  
Junction Temperature  
62.5  
/W  
TJ  
+150  
Operating and Storage Temperature  
TOPR, Tstg  
-55 to +150  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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