Datasheet > 3N80

3N80

更新时间： 2023-12-26 09:00:04

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	801K
描述
场效应晶体管

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3N80 数据手册

3 N 8 0

2.5A,800V N-Channel Power Mosfet

FEATURES



R_DS(ON)=3.8Ω@ V_GS= 10V

Ultra low gate charge ( typical 19 nC )

Low reverse transfer Capacitance ( CRSS = typical 11 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-220AB

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

800

Units

V_DSS

Drain-Source voltage

±30

V_GSS

I_D

Gate -Source voltage

Continuous Drain Current

Pulsed Drain Current

2.5

I_DM

E_AS

dv/dt

P_D

Avalanche Energy

Single Pulsed

170

4.5

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

R_θJA

Thermal resistance,Junction-to-Ambient

Junction Temperature

62.5

℃/W

T_J

+150

℃

Operating and Storage Temperature

T_OPR, Tstg

-55 to +150

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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