是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
风险等级: | 5.61 | Is Samacsys: | N |
雪崩能效等级(Eas): | 290 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 1.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 12 A |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3N40L-TND-R | UTC |
获取价格 |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |
3N49 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 15A I(C) | TO-36VAR | |
3N50 | UTC |
获取价格 |
3A, 500V N-CHANNEL POWER MOSFET | |
3N50_11 | UTC |
获取价格 |
3 Amps, 500 Volts N-CHANNEL POWER MOSFET | |
3N50_1109 | UTC |
获取价格 |
3A, 500V N-CHANNEL POWER MOSFET | |
3N50G-TF3-T | UTC |
获取价格 |
3A, 500V N-CHANNEL POWER MOSFET | |
3N50G-TN3-R | UTC |
获取价格 |
3A, 500V N-CHANNEL POWER MOSFET | |
3N50KG-MK-TF1-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
3N50KG-MK-TND-R | UTC |
获取价格 |
Power Field-Effect Transistor | |
3N50KG-TA3-T | UTC |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |