3MBI150U-120

更新时间： 2024-02-25 09:03:41

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
5页	118K
描述
1200V / 150A 3 in one-package

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3MBI150U-120 数据手册

3MBI150U-120

1200V / 150A 3 in one-package

IGBT Module U-Series

Features

Applications

· High speed switching

· Inverter for Motor drive

· Voltage drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Low inductance module structure

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Conditions

Rating

1200

Unit

Item

Symbol

VCES

VGES

Collector-Emitter voltage

Gate-Emitter voltaga

Collector current

±20

200

Continuous

1ms

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

150

400

ICp

300

150

-IC

300

-IC pulse

1 device

AC:1min.

735

°C

Collector Power Dissipation

+150

-40 to +125

2500

3.5

Junction temperature

Storage temperature

Tstg

VAC

N·m

Isolation voltage between terminal and copper base *1

Viso

Screw Torque

Mounting *2

*1 : All terminals should be connected together when isolation test will be done.

*2 : Recommendable value : 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols Conditions

Characteristics

Unit

Min.

Typ.

Max.

Zero gate voltage collector current

Gate-Emitter leakage current

VGE=0V, VCE=1200V

ICES

–

4.5

–

1.0

200

8.5

VCE=0V, VGE=±20V

VCE=20V, IC=150mA

VGE=15V, IC=150A

IGES

–

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

6.5

2.15

2.40

1.75

2.00

2.50

–

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

2.10

–

Input capacitance

Turn-on time

VCE=10V, VGE=0V, f=1MHz

µs

–

VCC=600V

ton

0.36

0.21

0.03

0.37

0.07

2.00

2.10

1.60

1.70

–

1.20

0.60

–

IC=150A

VGE=±15V

tr(i)

Turn-off time

RG=2.2 Ω

toff

1.00

0.30

2.30

–

Forward on voltage

VGE=0V

IF=150A

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

(terminal)

1.90

–

(chip)

trr

Reverse recovery time

IF=150A

µs

0.35

–

Lead resistance, terminal-chip*3

mΩ

R lead

2.4

*3:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

Items

Symbols

Conditions

Characteristics

Min. Typ.

Unit

Max.

–

0.17

0.28

–

IGBT

FWD

Thermal resistance

Rth(j-c)

°C/W

–

Rth(j-c)

°C/W

0.05

With thermal compound

Contact Thermal resistance

Rth(c-f)*4

*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

12 3 4 5

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