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3KP85C-B PDF预览

3KP85C-B

更新时间: 2024-11-22 19:15:23
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管电视
页数 文件大小 规格书
6页 1075K
描述
TVS DIODE

3KP85C-B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.67
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:MATTE TIN处于峰值回流温度下的最长时间:40
Base Number Matches:1

3KP85C-B 数据手册

 浏览型号3KP85C-B的Datasheet PDF文件第2页浏览型号3KP85C-B的Datasheet PDF文件第3页浏览型号3KP85C-B的Datasheet PDF文件第4页浏览型号3KP85C-B的Datasheet PDF文件第5页浏览型号3KP85C-B的Datasheet PDF文件第6页 
TransientVoltage Suppression Diodes  
Axial Leaded – 3000W > 3KP series  
Pb e3  
RoHS  
3KP Series  
Description  
Uni-directional  
The 3KP Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Bi-directional  
Features  
• 3000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in P600 package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
Typical IR less than 2μA  
when VBR min>12V  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
/ 0.375, (9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1), (Note 4)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
PD  
7. 0  
W
A
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 3)  
IFSM  
300  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
°C  
TypicalThermal Resistance  
Junction to Lead  
RθJL  
RθJA  
8.0  
40  
°C/W  
°C/W  
• Low incremental surge  
resistance  
TypicalThermal Resistance  
Junction to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
Applications  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
3. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
V
4. The PPPM of stacked-die parts is 4kW and please contact littelfuse for the detail  
stacked-die parts.  
Functional Diagram  
Additional Infomarion  
Datasheet  
Samples  
Resources  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  

3KP85C-B 替代型号

型号 品牌 替代类型 描述 数据表
5KP85CA-B LITTELFUSE

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