Datasheet > 3KP85A-G

3KP85A-G

更新时间： 2024-02-19 20:23:38

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
5页	308K
描述
3000W Transient Voltage Suppressor

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技术参数
数据手册

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3KP85A-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	Reach Compliance Code：	unknown
风险等级：	5.67	其他特性：	UL RECOGNIZED
最大击穿电压：	108.2 V	最小击穿电压：	94.4 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	8 W	认证状态：	Not Qualified
最大重复峰值反向电压：	85 V	表面贴装：	NO
技术：	AVALANCHE	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

3KP85A-G 数据手册

3000W Transient Voltage Suppressor

3KP-G Series

Stand-off Voltage: 5.0 ~ 440V

Power Dissipation: 3000 Watts

RoHS Device

R-6

Features

-Glass passivated chip.

0.052(1.32)

0.048(1.22)

DIA.

1.0(25.4)

MIN.

-Low leakage.

-Uni and Bidirection unit.

-Excellent clamping capability.

-Very Fast response time.

0.360(9.14)

0.340(8.64)

Mechanical Data

0.360(9.14)

0.340(8.64)

DIA.

-Case: Molded plastic R-6

-Epoxy: UL 94V-0 rate flame retardant.

1.0(25.4)

MIN.

-Lead: Solderable per MIL-STD-202, method

208 guranteed.

-Polarity: Color band denotes cathode end

except Bipolar.

Dimensions in inches and (millimeter)

-Weight: 2.1 grams

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derated current by 20%.

Symbol

Parameter

Value

Unit

Peak power dissipation with a 10/1000 μs waveform

(Note 1)

PPP

3000

Peak pulse current wih a 10/1000 μs waveform

IPP

See Next Table

6.5

(Note 1)

Power dissipation on infinite heatsink at TL=75°C

Peak forward surge current, 8.3mS single

half sine-wave unidirectional only

(Note 2)

IFSM

300

Maximum instantaneous forward voltage at

100A for unidirectional only (Note 3)

3.5 / 5.0

Operating junction and storage temperature range

NTOES:

TJ, TSTG

-55 to +150

°C

(1) Non-repetitive current pulse, per fig.3 and derated above TA=25°C per Fig. 1.

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

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