Datasheet > 3KBP06ME4

3KBP06ME4

更新时间： 2024-09-19 14:32:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	199K
描述
DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode

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中文翻译

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技术参数
数据手册

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3KBP06ME4 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LEAD FREE, PLASTIC, CASE KBPM, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.71	Base Number Matches：	1

3KBP06ME4 数据手册

3KBP005M thru 3KBP08M

New Product

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

Case Style KBPM

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

3 A

50 V to 800 V

80 A

5 µA

V_F

1.05 V

T_jmax.

150 °C

Features

Mechanical Data

• UL Recognition file number E54214

• Ideal for printed circuit board

• High surge current capability

• High case dielectric strength

• Solder Dip 260 °C, 40 seconds

Case: KBPM

Epoxy meets UL-94V-0 Flammability rating

Terminals: Silver plated (E4 Suffix) leads, solderable

per J-STD-002B and JESD22-B102D

Polarity: As marked on body

Typical Applications

General purpose use in ac-to-dc bridge full wave rec-

tification for Switching Power Supply, Home Appli-

ances, Office Equipment, and Telecommunication

applications

Maximum Ratings

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbols

3KBP

005M

3KBP

01M

3KBP

02M

3KBP

04M

3KBP

06M

3KBP

08M

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC blocking voltage

100

Maximum average forward output rectified

current at T_A= 55 °C (Fig. 1)

I_F(AV)

3.0

Peak forward surge current 50 Hz single half

sine-wave superimposed on rated load

I_FSM

I²t

A²sec

°C

Rating for fusing (t < 10 ms)

Operating junction and storage temperature

range

T_J, T_STG

- 55 to + 150

Document Number 88888

08-Jul-05

www.vishay.com

12 3 4

中文翻译

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