Datasheet > 3EZ56-BP

3EZ56-BP

更新时间： 2023-02-26 15:55:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	624K
描述
Zener Diode, 56V V(Z), 5%, Silicon, Unidirectional, DO-15, PLASTIC PACKAGE-2

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中文翻译

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数据手册

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3EZ56-BP 数据手册

3EZ11

THRU

3EZ200

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

3 W Glass Passivated

Junction Silicon

Low Profile Package

Built-in Strain Relief

Glass Passivated Junction

Low Inductance

Zener Diode

11-200 Volts

Excellent Clamping Capability

Mechanical Data

DO-15

CASE: JEDEC DO-15 Molded plastic over passivated junction

WEIGHT: 0.015 ounce, 0.04 gram

TERMINALS : Solder plated, solderable per MIL-STD-750,

method 2026

POLARITY : Color band denotes positive end (cathode)

Maximum Ratings @ 25^oC Unless Otherwise Specified

Peak Pulse Power

Cathode

Mark

Watts

P^D

Dissipation (Note A)

Derate above 75 C

mW/^oC

Peak Forward Surge

Current 8.3ms single

half sine-wave

superimposed on rated

load (JEDEC Method)

(Note B)

IFSM

Amps

Operating And

Storage

Temperature Range

T_J, T_STG-55^oC to

+150^oC

DIMENSIONS

NOTES:

INCHES

MIN

M M

DIM

NOTE

A. Mounted on 5.0mm²(.013mm thick) land areas.

M A X

0.300

0.140

0.034

-----

MIN

5.80

2.60

0.71

25.40

M A X

7.60

3.60

0.86

-----

0.230

0.104

0.028

1.000

B. Measured on 8.3ms, single half sine-wave or equivalent

square wave, duty cycle = 4 pulses per minute maximum.

www.mccsemi.com

Revision: 3

2002/12/31

12 3 4

中文翻译

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