Datasheet > 3DG8051

3DG8051

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	109K
描述
Transistor

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中文翻译

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技术参数
数据手册

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3DG8051 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

3DG8051 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO – 92L

3DG8051 TRANSISTOR (NPN)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

General Purpose Switching Application

Complementary to 3CG8551

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

750

167

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 0.1mA,I_E=0

I_C=10mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=50V,I_E=0

0.1

μA

Collector cut-off current

I_CEO

V_CE=40V,I_B=0

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

0.1

320

DC current gain

h_FE

V_CE=2V, I_C=0.1A

I_C=1A,I_B=0.1A

100

150

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

VCE=10V,IC=50mA, f=100MHz

A,Dec,2010

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