Datasheet > 3DG3332

3DG3332

更新时间： 2023-12-06 20:09:46

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	443K
描述
TO-92

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中文翻译

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数据手册

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3DG3332 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DG3332 TRANSISTOR (NPN)

TO-92

FEATURES



High breakdown voltage

1. EMITTER

2. COLLECTOR

3. BASE

Excellent h_FElinearity

Large current capacity and wide ASO

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Equivalent Circuit

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3DG3332

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ORDERING INFORMATIONꢀ

Part Number

Package

TO-92

Packing Method

Pack Quantity

Bulk

1000pcs/Bag

2000pcs/Box

3DG3332

TO-92

Tape

3DG3332ꢁꢂꢃ

MAXIMUM RATINGS (T^A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

180

Unit

Collector-Base Voltage

CollectorE- mitter Voltage

Emitter-Base Voltage

160

Collector Current -Continuous

0.7

P_C

Collector Power Dissipation

0.625

200

℃/W

℃

R_θJA

Thermal Resistance from Junction to Ambient

T_J,T_stg

Operation Junction and Storage Temperature Range

-55~+150

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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