Datasheet > 3DD200

3DD200

更新时间： 2024-09-23 06:17:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	114K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

3DD200 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

3DD200

DESCRIPTION

·With TO-3 package

·High collector-base breakdown voltage

: V_CBO=250V

APPLICATIONS

·For TV horizontal output applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

250

100

UNIT

Open emitter

Open base

Open collector

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=75℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

CHARACTERISTICS

MAX

UNIT

Rθjc

Thermal resistance junction to case

1.5

℃/W

12 3

中文翻译

下载PDF

与3DD200相关器件

型号	品牌	获取价格	描述	数据表
3DD201	ISC	获取价格	Silicon NPN Power Transistors
3DD207	ISC	获取价格	Silicon NPN Power Transistors
3DD209L	JSMC	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD209L-O-AB-N-B	JSMC	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD209L-O-AN-N-B	JSMC	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD2101	JSMC	获取价格	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
3DD2101-O-A-N-D	JSMC	获取价格	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
3DD2102	JSMC	获取价格	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
3DD2102-O-A-N-D	JSMC	获取价格	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
3DD2103	JSMC	获取价格	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY