Datasheet > 3DD167E

3DD167E

更新时间： 2024-11-12 01:12:39

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	221K
描述
isc Silicon NPN Power Transistor

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3DD167E 数据手册

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

3DD167C

DESCRIPTION

·With TO-3 packaging

·Large collector current

·Low collector saturation voltage

·High power dissipation

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in DC-DC converter

·Driver of solenoid or motor

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

VALUE

200

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

150

Collector Current-Continuous

Total Power Dissipation@T_C=75℃

Max.Junction Temperature

Storage Temperature

P_D

150

℃

T_J

175

-55~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.66

℃/W

R_{th j-c}

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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