Datasheet > 3DD13009U

3DD13009U

更新时间： 2024-09-24 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	398K
描述
400V,12A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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3DD13009U 数据手册

NPN Silicon Epitaxial Planar Transistor

3DD13009U

Features



Low switch loss

Low reverse leakage current

Good high temperature characteristics

Mechanic al Data



Case: TO-247

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-247

Ordering Information

Part Number

Package

TO-247

Shipping Quantity

Marking Code

3DD13009U

30 pcs / Tube

3DD13009U

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

700

400

Unit

I_CM

Base Current (Continuous)

I_B

Base Current (Pulse)

I_BM

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C)

Power Dissipation (T_C= 25°C)

Thermal Resistance (Junction-to-Air)

Thermal Resistance (Junction-to-Case)

Junction Temperature

Symbol

P_D

Value

11.3

Unit

P_D

156

R_θJA

R_θJC

T_J

C/W

°C

0.8

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0724A: March 2023 [1.1]

www.gmesemi.com

12 3 4

中文翻译

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