,
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistor
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TO-220-3L
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3DD13005ND66ꢀꢀꢀ75$16I6725ꢀꢁ131ꢂꢀ
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FEATURES
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ꢋꢍ
MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
&ROOHFWRUꢏ%DVHꢀ9ROWDJHꢀ
&ROOHFWRUꢏ(PLWWHUꢀ9ROWDJHꢀ
(PLWWHUꢏ%DVHꢀ9ROWDJHꢀ
&ROOHFWRUꢀ&XUUHQWꢀꢏ&RQWLQXRXVꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
&ROOHFWRUꢀ3RZHUꢀ'LVVLSDWLRQꢀ
Value
ꢆꢅꢅꢀ
ꢇꢈꢅꢀ
ꢉꢀ
ꢀꢇ
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Unit
9ꢀ
9ꢀ
9ꢀ
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PC
RșJ A
TJ,Tstg
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Operation Junction and Storage Temperature Rangeꢀ
ꢎꢈꢍꢊꢀ
ꢏꢊꢊꢏꢃꢊꢅ
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Я
ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified)
Parameter
Symbol
9ꢁ%5ꢂ&%2
9ꢁ%5ꢂ&(2
9ꢁ%5ꢂ(%2
Test conditions
Min
Typ
Max
Unit
9ꢀ
9ꢀ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
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,& ꢀꢃP$ꢄ,( ꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢆꢅꢅꢀ
,& ꢀꢃꢅP$ꢄ,% ꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢇꢈꢅꢀ
,( ꢀꢃP$ꢄ,& ꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢉ
9&% ꢆꢅꢅ9ꢄ,( ꢅꢀꢀ
9&( ꢇꢅꢅ9ꢄ,% ꢅꢀꢀ
9(% ꢆ9ꢄ,& ꢅꢀꢀ
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,
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(%2ꢀ
10ꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
10ꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
100 ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀµ
$ꢀ
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9&( ꢊ9ꢄꢀ,& ꢃ$ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢃꢅꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢇꢅꢀ
9&( ꢊ9ꢄꢀ,& ꢈꢅꢅP$ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ10ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ60
9&( ꢊ9ꢄꢀ,& ꢃꢅP$ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢊꢀꢀꢀꢀ
9&( ꢊ9ꢄꢀ,& ꢇ$ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢌ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢇꢅꢀ
DC current gain
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9&(ꢁVDWꢂꢁꢃꢂ
9&(ꢁVDWꢂꢁꢈꢂ
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,& ꢃ$ꢄ,% ꢅꢍꢈ$ꢀꢀ
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ꢅꢍꢋꢀ
9ꢀ
Collector-emitter saturation voltage
,& ꢀ$ꢁ,% ꢂꢃꢄ$ꢅꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ ꢅ
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9&(ꢁVDWꢂꢁꢋꢂ
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Base-emitter saturation voltage
Diode forward voltage
Transition frequency
Rise time
Storage time
Fall time
9%(ꢁVDWꢂ
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,& ꢈ$ꢄ,% ꢅꢍꢊ$ꢀꢀ
,& ꢈ$ꢀꢀ
9&( ꢃꢅ9ꢄꢀ,& ꢅꢍꢊ$ꢄI ꢃ0+]ꢀꢀꢀꢀꢀ
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W
6ꢀ
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CLASSIFICATION of hFEꢀꢁꢂ
Range
20~30
30~40
ꢁVꢂ
CLASSIFICATION of W6
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
A
B
Rank
2.0‐3.0
3.0‐4.0
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Range
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