Datasheet > 3DD13005ND56

3DD13005ND56

更新时间： 2024-01-02 16:55:30

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Transistor

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3DD13005ND56 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

3DD13005ND56 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

3DD13005ND56 TRANSISTOR (NPN)

TO-220

FEATURES

Power switching applications

1. BASE

Good high temperature

Low saturation voltage

High speed switching

2. COLLECTOR

3. EMITTER

1 2 3

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

700

400

Unit

CIRCUIT:

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

2.5

P_C

T_j

150

-55~150

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 1mA,I_E=0

700

400

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=700V,I_E=0

V_CE=400V,I_B=0

V_EB=9V,I_C=0

100

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)1

V_CE(sat)2

V_{BE(sat) 1}

V_{BE(sat) 2}

V_ECF

V_CE=10V, I_C=0.5A

V_CE=10V, I_C=5mA

V_CE=5V, I_C=2A

I_C=1A,I_B=0.2A

I_C=2A,I_B=0.4A

I_C=2A,I_B=0.5A

I_C=0.5A,I_B=0.1A

I_C=2A

DC current gain

0.5

0.8

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Emitter-collector forward voltage

Transition frequency

Storage time

f_T

V_CE=10V,I_C=500mA

I_C=0.25A (UI9600)

MHz

μs

t_s

2.5

CLASSIFICATION OF h_FE(1)

10-15

15-20

20-25

25-30

30-35

35-40

Range

CLASSIFICATION OF t_s

3-3.5 (μs)

4-4.5 (μs)

Rank

2.5-3 (μs)

3.5-4 (μs)

4.5-5 (μs)

Range

A,Dec,2010

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