Datasheet > 3DD13005N96B1

3DD13005N96B1

更新时间： 2022-12-01 21:08:05

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	269K
描述
Transistor

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数据手册

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3DD13005N96B1 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

3DD13005N96 TRANSISTOR (NPN)

TO-220

FEATURES

Power switching applications

Good high temperature

Low saturation voltage

High speed switching

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

700

Unit

400

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

1.5

T_j

150

℃

T_stg

Storage Temperature

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 1mA,I_E=0

Min

700

400

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=700V,I_E=0

V_CE=400V,I_B=0

V_EB=7V,I_C=0

100

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=5V, I_C=1A

V_CE=5V, I_C=10mA

V_CE=5V, I_C=2A

I_C=1A,I_B=0.2A

DC current gain

h_FE(2)

h_FE(3)

0.3

0.8

1.6

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

t_S

Collector-emitter saturation voltage

I_C=4A,I_B=1A

Base-emitter saturation voltage

Storage time

I_C=2A,I_B=0.5A

I_C=250mA (UI9600)

V_CE=10V, I_C=0.5A,f=1MHz

2.5

μs

MHz

Transition frequency

f_T

CLASSIFICATION OF h_FE(1)

Range

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF t_S

Rank

3-3.5(μs )

3.5-4 (μs )

4-4.5 (μs )

Range

2.5-3(μs )

4.5-5 (μs )

A,Jun,2011

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