Datasheet > 3DD13005L3DB1

3DD13005L3DB1

更新时间： 2024-02-21 17:55:41

品牌	Logo	应用领域
JCST		/
页数	文件大小	规格书
1页	886K
描述
Transistor

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技术参数
数据手册

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3DD13005L3DB1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

3DD13005L3DB1 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

3DD13005L3D TRANSISTOR (NPN)

TO-126

FEATURES

Power switching applications

1. BASE

Good high temperature

Low saturation voltage

High speed switching

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

350

Unit

200

CIRCUIT:

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

1.25

150

T_j

℃

T_stg

Storage Temperature

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

Min

350

200

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=350V,I_E=0

V_CE=200V,I_B=0

V_EB=9V,I_C=0

100

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=5V, I_C=1A

V_CE=5V, I_C=5mA

V_CE=5V, I_C=2A

V_CE=5V, I_C=4A

I_C=1A,I_B=0.2A

I_C=2A,I_B=0.4A

I_C=4A,I_B=1A

h_FE(2)

DC current gain

h_FE(3)

h_FE(4)

V_CE(sat)1

V_CE(sat)2

V_CE(sat)3

V_BE(sat)1

V_BE(sat)2

V_ECF

0.8

Collector-emitter saturation voltage

Base-emitter saturation voltage

I_C=1A,I_B=0.25A

I_C=2A,I_B=0.5A

I_C=2A

1.2

1.5

Emitter-Collector forward voltage

Storage time

I_C=250mA (UI9600)

V_CE=10V, I_C=0.5A

2.5

µs

MHz

t_S

f_T

Transition frequency

CLASSIFICATION OF h_FE(1)

Range

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF t_S

Rank

3-3.5(µs )

Range

2.5-3(µs )

3.5-4 (µs )

4-4.5 (µs )

4.5-5 (µs )

A,Dec,2010

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