Datasheet > 3DD13005-TO-220

3DD13005-TO-220

更新时间： 2024-09-24 02:59:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	284K
描述
TRANSISTOR（ NPN ）

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中文翻译

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数据手册

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3DD13005-TO-220 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

3DD13005

TRANSISTOR（ NPN ）

TO— 220

FEATURES

Power dissipation

P_CM

1.5 W（Tamb=25℃）

4 A

1.BASE

Collector current

I_CM:

2.COLLECTOR

3.EMITTER

1 2 3

Collector-base voltage

V_(BR)CBO: 700 V

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

Ic= 1000 µA，I_E=0

Ic= 10 mA，I_B=0

conditions

MIN

700

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 1000 µA，I_C=0

V_CB= 700 V， I_E=0

V_CE= 400 V， I_B=0

1000

100

1000

µA

Collector cut-off current

I_CEO

V_EB=

V， I_C=0

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= 5 V, I_C= 1000mA

I_C=2000mA,I_B=500 mA

I_C=2000mA, I_B= 500mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.6

V_CE=10 V, IC=500mA

f = 1MHz

Transition Frequency

MHz

I_B1=-I_B2=0.4A, I_C=2A

Fall time

0.9

µs

Storage time

V_CC=120V

CLASSIFICATION OF h_FE

Rank

Range

10-15

15-20

20-25

25-30

30-35

35-40

12 3

中文翻译

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