Datasheet > 3DD13003A1(TO-220)

3DD13003A1(TO-220)

更新时间： 2024-01-27 19:19:08

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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2页	227K
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Transistor

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3DD13003A1(TO-220) 技术参数

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3DD13003A1(TO-220) 数据手册

浏览型号3DD13003A1(TO-220)的Datasheet PDF文件第2页

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

TO-220

3DD13003 TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

· power switching applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

700

400

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

1.5

P_C

℃

T_J

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Test

conditions

MIN

TYP

MAX

UNIT

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=5mA, I_E=0

700

400

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

I_E=2mA, I_C=0

V_CB=700V,I_E=0

0.5

Collector cut-off current

I_CEO

V_CE=400V,I_B=0

Emitter cut-off current

I_EBO

V_EB=9V, I_C=0

h_FE1

V_CE=5V, I_C= 0.5 A

V_CE=5V, I_C= 1.5A

I_C=1A,I_B=0.25A

V_CE=10V,Ic=100mA, f =1MHz

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.6

1.2

MHz

Fall time

t_f

I_C=1A, I_B1=-I_B2=0.2A, V_CC=100V

0.5

µs

Storage time

I_C=250mA (UI9600)

μs

t_S

CLASSIFICATION OF h_FE

Range

8-10

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF t_S

Rank

2.5-3(μs )

3-3.5(μs )

3.5-4 (μs )

Range

2-2.5 (μs )

A,Mar,2011

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