Datasheet > 3DD13002N8DB1

3DD13002N8DB1

更新时间： 2024-01-06 21:09:31

品牌	Logo	应用领域
JCST		/
页数	文件大小	规格书
1页	1054K
描述
Transistor

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3DD13002N8DB1 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

3DD13002N8D TRANSISTOR (NPN)

TO-126

FEATURES

Power switching applications

1. BASE

Good high temperature

Low saturation voltage

High speed switching

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

700

Unit

400

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

1.25

150

℃

T_j

T_stg

Storage Temperature

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=0.1mA,I_E=0

Min

700

400

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=700V,I_E=0

V_CE=400V,I_B=0

V_EB=9V,I_C=0

100

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=10V, I_C=200mA

V_CE=10V, I_C=0.25mA

I_C=200mA,I_B=40mA

IC=2A

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Emitter-Collector voltage

Storage time

V_CE(sat)

V_BE(sat)

V^ECF

0.5

1.1

I_C=100mA (UI9600)

μs

t_S

CLASSIFICATION OF h_FE(1)

Range

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF t_S

Rank

3-3.5(µs )

3.5-4 (µs )

Range

2-2.5 (µs )

2.5-3(µs )

A,Dec,2010

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