Datasheet > 3DD13002I

3DD13002I

更新时间： 2024-09-19 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	333K
描述
400V,1A,Medium Power NPN Bipolar Transistor

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中文翻译

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数据手册

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3DD13002I 数据手册

High Voltage Fast Switching NPN Power Transistor

3DD13002I 3DD13002

Features



High speed switching

Small flat package

Applications



High voltage switch mode application

Mechanical Data



Case: TO-251, TO-252

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

TO-252

Ordering Information

Part Number

3DD13002I

3DD13002

Package

Shipping Quantity

Marking Code

13002I

TO-251

TO-252

80 pcs / Tube

80 pcs / Tube or 2500 pcs / Tape & Reel

13002

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

600

400

Collector Current (t_p< 5ms)

I_CM

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C)

Thermal Resistance Junction-to-Air

Junction Temperature

Symbol

P_D

Value

1.25

Unit

R_θJA

T_J

100

°C /W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0031A: November 2023 [2.0]

www.gmesemi.com

12 3 4 5

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